BSB012N03LX3 G
Framleiðandi Vöru númer:

BSB012N03LX3 G

Product Overview

Framleiðandi:

Infineon Technologies

Völu númer:

BSB012N03LX3 G-DG

Lýsing:

MOSFET N-CH 30V 39A/180A 2WDSON
Mikilvægar upplýsingar:
N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

Birgðir:

RFQ á netinu
12801744
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BSB012N03LX3 G Tæknilegar forskriftir

Flokkur
FETs, MOSFETs, Einn FET, MOSFET
Framleiðandi
Infineon Technologies
Pakkning
-
Röð
OptiMOS™
Staða vöru
Obsolete
FET gerð
N-Channel
Tækni
MOSFET (Metal Oxide)
Frárennsli til uppruna spennu (Vdss)
30 V
Núverandi - Stöðugt frárennsli (Id) @ 25 °C
39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds á (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Hliðhleðsla (Qg) (hámark) @ Vgs
169 nC @ 10 V
Vgs (hámark)
±20V
Inntak rýmd (Ciss) (hámark) @ Vds
16900 pF @ 15 V
FET eiginleiki
-
Afl leiðni (hámark)
2.8W (Ta), 89W (Tc)
Hitastig rekstrar
-40°C ~ 150°C (TJ)
Gerð uppsetningar
Surface Mount
Birgir tæki pakki
MG-WDSON-2, CanPAK M™
Pakki / hulstur
3-WDSON

Aukainformation

Venjulegur pakki
5,000
Önnur nöfn
BSB012N03LX3G
BSB012N03LX3 G-DG
SP000597846
BSB012N03LX3 GDKR-DG
BSB012N03LX3 GDKR
BSB012N03LX3GTR
BSB012N03LX3 GCT
BSB012N03LX3GXT
BSB012N03LX3GDKR
BSB012N03LX3GXUMA1
BSB012N03LX3 GTR-DG
BSB012N03LX3 GCT-DG
BSB012N03LX3GCT

Umhverfis- og útflutningsflokkun

Rakanæmi (MSL)
3 (168 Hours)
REACH staða
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI vottun
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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